phone: +39-011-988 2251 fax: +39-011-988 1358 http://gpsemi.it/pdf/gptp1270.pdf gptp1270 phase controlled scr high reliability operation electroplating applications resistance welding applications blocking voltage up to 800 v average current 2700 a surge current 32 ka blocking characteristics characteristic conditions v rrm repetitive peak reverse voltage 800 v v rsm non-repetitive peak reverse voltage 900 v v drm repetitive peak off-state voltage 800 v i drm repetitive peak off-state current, max. v drm , single phase, half wave, tj = tjmax 100 ma i rrm repetitive peak reverse current, max. v rrm , single phase, half wave, tj = tjmax 100 ma on-state characteristics i t(av) average on-state current sine wave,180 conduction, th = 55 c 2700 a i t(rms) r.m.s. on-state current sine wave,180 conduction, th = 55 c 4241 a i tsm surge on-state current non rep. half sine wave, 50 hz, v r = 0 v, t j = t jmax 32 ka i2t i2 t for fusing coordination 5120 ka2s v t(to) threshold voltage t j = t jmax 0.85 v r t on-state slope resistance t j = t jmax 0.122 m w v tm peak on-state voltage, max on-state current i t = 2000 a , tj = 25 c 1.15 v i h holding current, max t j = 25 c 300 ma i l latching current, typ t j = 25 c 700 ma triggering characteristics v gt gate trigger voltage t j = 25 c, v d = 5 v 2.5 v i gt gate trigger current t j = 25 c, v d = 5 v 300 ma v gd non-trigger voltage v d = 67% v rrm , t j = t jmax 0.25 v p gm peak gate power dissipation pulse width 100 s 150 w p g(av) average gate power dissipation 2 w i fgm peak gate current 10 a v fgm peak gate voltage (forward) 10 v v rgm peak gate voltage (reverse) 12 v switching characteristics di/dt critical rate of rise of on-state current t j = t jmax 200 a/s dv/dt critical rate of rise of off-state voltage t j = t jmax 1000 v/s t q turn-off time, typ t j = t jmax , i t = 1000 a, di/dt = -20 a/s s vr = 50 v, vd = 67% vdrm, dv/dt = 20 v/s thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) double side cooled 0.015 c/w r th(c-h) thermal resistance (case to heatsink) double side cooled 0.006 c/w t jmax max operating junction temperature 150 c t stg storage temperature -40 / 150 c f clamping force 5% 23 kn mass 500 g document gptp1270t002 value green power solutions srl web: www.gpsemi.it e - mail: info@gpsemi.it
phase controlled scr gptp1270 ordering information gptp1270-vvgl vv : blocking voltage / 100 (e.g. 08 for 800 v) g : trigger lead type ( s = straight t = twisted blank = no leads) l : trigger lead lenght x 100mm ( 3 - 4 - 5 - 7 blank = no leads) document gptp1270t002 0 5 10 15 20 25 30 35 1 10 100 i tsm [a] number of cycle current pulses [n] maximum surge current d.s. cooled 0 1000 2000 3000 4000 5000 6000 0 0.5 1 1.5 2 i t [a] v t [v] on - state voltage drop t j =t jmax 0.000 0.004 0.008 0.012 0.016 0.020 0.001 0.01 0.1 1 10 z th(j - c) [ c / w] time [s] thermal impedance (j - c) 50 70 90 110 130 150 170 0 400 800 1200 1600 2000 2400 2800 heatsink temperature [ c] i t [a] current rating - sine wave 180 90 120 60 30 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 400 800 1200 1600 2000 2400 2800 p f [w] i t [a] power loss - sine wave 180 120 90 60 30 i n the interest of product improvement green power solutions reserves the right to change any specification given in this data sh eet without notice. 0 1000 2000 3000 4000 5000 6000 0.5 1 1.5 2 i t [a] v t [v] on - state voltage drop t j =t jmax
|
